The BAP64-06W from NXP Semiconductors is a RF PIN Diode with Frequency Up to 3 GHz, Insertion Loss 0.08 to 2.23 dB, Isolation 10.9 to 18.5 dB, Forward Voltage 0.95 to 1.1 V, Forward Current 100 mA. Tags: Surface Mount. More details for BAP64-06W can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAP64-06W
  • Manufacturer
    NXP Semiconductors
  • Description
    Silicon PIN diode with 100 mA of forward current

General Parameters

  • Application
    Attenuator, Switch
  • Frequency
    Up to 3 GHz
  • Configuration
    Common Anode
  • Insertion Loss
    0.08 to 2.23 dB
  • Isolation
    10.9 to 18.5 dB
  • Forward Voltage
    0.95 to 1.1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    100 V
  • Reverse Current
    1 to 10 uA
  • Power Dissipation
    240 mW
  • Thermal Resistance
    250 K/W
  • Forward Resistance
    0.7 to 40 Ohms
  • Series Inductance
    1.6 nH
  • Capacitance
    0.23 to 0.52 pF
  • Junction Temperature
    -65 to 150 Degree C
  • Charge Carrier Life Time
    1.55 us
  • No. of Diodes
    2
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Storage Temperature
    -65 to 150 Degree C

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