The BAP65-03 from NXP Semiconductors is a RF PIN Diode with Insertion Loss 0.05 to 0.18 dB, Isolation 4.1 to 10.2 dB, Forward Voltage 0.9 to 1.1 V, Forward Current 100 mA, Reverse Voltage 30 V. Tags: Surface Mount. More details for BAP65-03 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAP65-03
  • Manufacturer
    NXP Semiconductors
  • Description
    Silicon PIN diode with 100 mA of forward current

General Parameters

  • Application
    Attenuator, Switch
  • Application Industry
    Mobile
  • Configuration
    Single Diode
  • Insertion Loss
    0.05 to 0.18 dB
  • Isolation
    4.1 to 10.2 dB
  • Forward Voltage
    0.9 to 1.1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    30 V
  • Reverse Current
    0.02 uA
  • Power Dissipation
    500 mW
  • Thermal Resistance
    120 K/W
  • Forward Resistance
    0.35 to 1 Ohms
  • Series Inductance
    1.5 nH
  • Capacitance
    0.375 to 0.9 pF
  • Junction Temperature
    -65 to 150 Degree C
  • Charge Carrier Life Time
    0.17 us
  • No. of Diodes
    1
  • Package Type
    Surface Mount
  • Package
    SOD323
  • Storage Temperature
    -65 to 150 Degree C

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