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  6. BAP70-03

The BAP70-03 from NXP Semiconductors is a RF PIN Diode with Forward Voltage 0.9 to 1.1 V, Forward Current 100 mA, Reverse Voltage 50 V, Reverse Current 0.1 uA, Power Dissipation 500 mW. Tags: Surface Mount. More details for BAP70-03 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAP70-03
  • Manufacturer
    NXP Semiconductors
  • Description
    Silicon PIN diode with 100 mA of forward current

General Parameters

  • Application
    Attenuator
  • Application Industry
    Radio
  • Configuration
    Single Diode
  • Forward Voltage
    0.9 to 1.1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    50 V
  • Reverse Current
    0.1 uA
  • Power Dissipation
    500 mW
  • Thermal Resistance
    120 K/W
  • Forward Resistance
    1.4 to 100 Ohms
  • Series Inductance
    1.5 nH
  • Capacitance
    200 to 570 pF
  • Junction Temperature
    -65 to 150 Degree C
  • Charge Carrier Life Time
    1.25 Us
  • No. of Diodes
    1
  • Package Type
    Surface Mount
  • Package
    SOD323 (SC-76)
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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