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  6. BAP70AM

The BAP70AM from NXP Semiconductors is a RF PIN Diode with Forward Voltage 0.9 to 1.1 V, Forward Current 100 mA, Reverse Voltage 50 V, Reverse Current 0.1 uA, Power Dissipation 300 mW. Tags: Surface Mount. More details for BAP70AM can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAP70AM
  • Manufacturer
    NXP Semiconductors
  • Description
    Silicon PIN diode array with 100 mA of forward current

General Parameters

  • Application
    Attenuator
  • Application Industry
    Radio
  • Configuration
    In Series
  • Forward Voltage
    0.9 to 1.1 V
  • Forward Current
    100 mA
  • Reverse Voltage
    50 V
  • Reverse Current
    0.1 uA
  • Power Dissipation
    300 mW
  • Thermal Resistance
    260 K/W
  • Forward Resistance
    1.4 to 100 Ohms
  • Series Inductance
    0.6 nH
  • Capacitance
    200 to 570 pF
  • Junction Temperature
    -65 to 150 Degree C
  • Charge Carrier Life Time
    1.25 Us
  • No. of Diodes
    2
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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