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BA779-G

RF PIN Diode by Vishay (10 more products)
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The BA779-G from Vishay is a RF PIN Diode with Frequency 10 MHz to 1 GHz, Forward Voltage 1 V @ 20 mA, Forward Current 50 mA, Reverse Voltage 30 V, Reverse Current 0.05 uA. Tags: Surface Mount. More details for BA779-G can be seen below.

Product Specifications

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Product Details

  • Part Number
    BA779-G
  • Manufacturer
    Vishay
  • Description
    RF PIN Diodes with 50 mA of forward current

General Parameters

  • Application
    Attenuator
  • Frequency
    10 MHz to 1 GHz
  • Configuration
    Single Diode
  • Forward Voltage
    1 V @ 20 mA
  • Forward Current
    50 mA
  • Reverse Voltage
    30 V
  • Reverse Current
    0.05 uA
  • Parallel Resistance
    5000 Ohms
  • Thermal Resistance
    500 K/W
  • Forward Resistance
    50 Ohms
  • Capacitance
    0.5 pF
  • Junction Temperature
    125 Degree C
  • Charge Carrier Life Time
    4 uS
  • No. of Diodes
    1
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Weight
    8.1 mg
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents
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