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MAP-286S

RF Schottky Diode by M-pulse Microwave (250 more products)
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The MAP-286S from M-pulse Microwave is a RF Schottky Diode with Forward continuous Current 1 mA, Forward Voltage 0.5 to 0.6 V, Power Dissipation 100 mW, Capacitance 0.3 - 0.5 pF, Operating Temperature -65 to +150 Degrees C. More details for MAP-286S can be seen below.

Product Specifications

Product Details

  • Part Number
    MAP-286S
  • Manufacturer
    M-pulse Microwave
  • Description
    Schottky Diodes, Microwave and RF

General Parameters

  • Configuration
    Anti-Parallel Pair
  • Forward continuous Current
    1 mA
  • Forward Voltage
    0.5 to 0.6 V
  • Power Dissipation
    100 mW
  • Impedance
    10 Ohms
  • Capacitance
    0.3 - 0.5 pF
  • Operating Temperature
    -65 to +150 Degrees C
  • Storage Temperature
    -65 to +200 Degrees C

Technical Documents
View details on the manufacturer's website