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The RB521S30 from NXP Semiconductors is a RF Schottky Diode with Forward Voltage 500 V@IF=200mA, Current Surge Peak 1 A, Voltage 30 V, Current 200 mA, Capacitance 25 pF@VR=1V. Tags: Surface Mount. More details for RB521S30 can be seen below.
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