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SDS065J006E2

RF Schottky Diode by Sanan IC (66 more products)
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SDS065J006E2 Image

The SDS065J006E2 from Sanan IC is a RF Schottky Diode with Peak Reverse Voltage 650 V (Surge Peak), Forward continuous Current 6000 to 17000 mA, Forward Voltage 1.4 to 2.5 V, Current Surge Peak 54 A (Non-Repetitive), Current 1 to 120 µA (Reverse). Tags: Surface Mount, Schottky Barrier Diode (SBD). More details for SDS065J006E2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SDS065J006E2
  • Manufacturer
    Sanan IC
  • Description
    650 V / 6 A, SiC Schottky Barrier Diode

General Parameters

  • type
    Schottky Barrier Diode (SBD)
  • Peak Reverse Voltage
    650 V (Surge Peak)
  • Forward continuous Current
    6000 to 17000 mA
  • Forward Voltage
    1.4 to 2.5 V
  • Current Surge Peak
    54 A (Non-Repetitive)
  • Current
    1 to 120 µA (Reverse)
  • Power Dissipation
    68 W
  • Capacitance
    28 to 311 pF
  • Application
    Switching Power Supply, Power Factor Correction, Motor Drive, Traction, Charging Pile
  • Package Type
    Surface Mount
  • Package
    TO263-2
  • Operating Temperature
    -55 to 175 Degree C
  • Storage Temperature
    -55 to 175 Degree C

Technical Documents
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