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SDS120J010E2

RF Schottky Diode by Sanan IC (66 more products)
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SDS120J010E2 Image

The SDS120J010E2 from Sanan IC is a RF Schottky Diode with Peak Reverse Voltage 1200 V (Surge Peak), Forward continuous Current 10000 to 29000 mA, Forward Voltage 1.45 to 2.70 V, Current Surge Peak 95 A (Non-Repetitive), Current 2 to 200 uA (Reverse). Tags: Surface Mount, Schottky Barrier Diode (SBD). More details for SDS120J010E2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SDS120J010E2
  • Manufacturer
    Sanan IC
  • Description
    1200 V / 10 A, SiC Schottky Barrier Diode

General Parameters

  • type
    Schottky Barrier Diode (SBD)
  • Peak Reverse Voltage
    1200 V (Surge Peak)
  • Forward continuous Current
    10000 to 29000 mA
  • Forward Voltage
    1.45 to 2.70 V
  • Current Surge Peak
    95 A (Non-Repetitive)
  • Current
    2 to 200 uA (Reverse)
  • Power Dissipation
    125 W
  • Capacitance
    37 to 700 pF
  • Application
    Switching Power Supply, Power Factor Correction, Motor Driver, Traction, Charging Pile
  • Package Type
    Surface Mount
  • Package
    TO-263-2L
  • Operating Temperature
    -55 to 175 Degree C
  • Storage Temperature
    -55 to 175 Degree C

Technical Documents
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