SDS120J010G2

RF Schottky Diode by Sanan IC (66 more products)

Note : Your request will be directed to Sanan IC.

SDS120J010G2 Image

The SDS120J010G2 from Sanan IC is a RF Schottky Diode with Peak Reverse Voltage 1200 V (Surge Peak), Forward continuous Current 5000 to 33000 mA, Forward Voltage 1.4 to 2 V, Current Surge Peak 55 A (Non-Repetitive), Current 1 to 100 uA (Reverse). Tags: Surface Mount, Schottky Barrier Diode (SBD). More details for SDS120J010G2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SDS120J010G2
  • Manufacturer
    Sanan IC
  • Description
    1200 V / 5 A, SiC Schottky Barrier Diode

General Parameters

  • type
    Schottky Barrier Diode (SBD)
  • Peak Reverse Voltage
    1200 V (Surge Peak)
  • Forward continuous Current
    5000 to 33000 mA
  • Forward Voltage
    1.4 to 2 V
  • Current Surge Peak
    55 A (Non-Repetitive)
  • Current
    1 to 100 uA (Reverse)
  • Power Dissipation
    79 W
  • Capacitance
    20 to 353 pF
  • Application
    Switching Power Supply, Power Factor Correction, Motor Driver, Traction, Charging Pile
  • Package Type
    Surface Mount
  • Package
    TO-247-3L
  • Operating Temperature
    -55 to 175 Degree C
  • Storage Temperature
    -55 to 175 Degree C

Technical Documents