HVV1214-140

The HVV1214-140 from Advanced Semiconductor, Inc. is an Enhancement Mode RF MOSFET Power Transistor that operates from 1200 to 1400 MHz. The high voltage MOSFET transistor produces over 140 W of pulsed output power with a gain of 20.5 dB and has an efficiency of 43%. The device has a pulse width of 200 µs and a duty cycle of 10%. It requires a 50 V supply voltage and consumes 100 mA of current. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. This RoHS-compliant power transistor is available in a flange type package and is ideal for high-power pulsed applications such as L-band ground-based radars.