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AM005WH2-BI-R

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The AM005WH2-BI-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 12 GHz, Power 26 dBm, Power(W) 0.4 W, P1dB 25 dBm, Power Gain (Gp) 17.5 to 20 dB. Tags: Flanged. More details for AM005WH2-BI-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM005WH2-BI-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    HiFET High Voltage GaAs FET DC-12 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure, Radar, Broadcast
  • Application
    Cellular, Radio, Repeater, C Band, VSAT, Radar, Communication System
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • Power
    26 dBm
  • Power(W)
    0.4 W
  • P1dB
    25 dBm
  • Power Gain (Gp)
    17.5 to 20 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    22 to 30 V
  • Drain Efficiency
    0.37
  • Drain Current
    75 mA
  • Thermal Resistance
    100 °C/W
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

Technical Documents
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