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AM012WN-BI-R

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The AM012WN-BI-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 10 GHz, Power 36 to 37 dBm (P5dB), Power(W) 3.98 W, Power Gain (Gp) 15 to 17 dB, Supply Voltage 28 V. Tags: Flanged. More details for AM012WN-BI-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM012WN-BI-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    Ceramic Package GaN AM060WX-BI-R Power HEMT DC-10GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Broadcast
  • Application
    Cellular, Radio, Base Station, Radar, Test & Instrumentation, Military, Jammers
  • CW/Pulse
    CW
  • Frequency
    DC to 10 GHz
  • Power
    36 to 37 dBm (P5dB)
  • Power(W)
    3.98 W
  • Power Gain (Gp)
    15 to 17 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    90 to 120 V
  • Drain Current
    188 mA
  • Thermal Resistance
    8.46 °C/W
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

Technical Documents
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