ART2K0FE

RF Transistor by Ampleon (326 more products)

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ART2K0FE Image

The ART2K0FE from Ampleon is an LDMOS Power Transistor that operates from 1 to 400 MHz. It delivers an output power of 2000 watts with a power gain of 28.9 dB and a drain efficiency of 85.8%. This transistor is based on Advanced Rugged Technology (ART), requires a 65 V power supply, and has been designed for ISM Band applications. It is available in a flanged-balanced ceramic package with integrated dual-sided ESD protection that enables class C operation and complete switch-off of the transistor. The ART2K0FE is suitable for industrial, scientific and medical applications (Plasma generators, MRI systems, CO2 lasers, particle accelerators), FM radio and radars (non-cellular communications, UHF radars).

Product Specifications

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Product Details

  • Part Number
    ART2K0FE
  • Manufacturer
    Ampleon
  • Description
    2000 W LDMOS Power Transistor for the 400 MHz ISM Band

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar, Aerospace & Defence, Broadcast, Wireless Infrastructure
  • Application
    Industrial, Scientific and Medical, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    1 to 400 MHz
  • Power
    60.97 to 63.22 dBm
  • Power(W)
    1250 to 2100 W
  • Power Gain (Gp)
    24.7 to 28.9 dB
  • Class
    AB
  • Supply Voltage
    30 to 65 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Breakdown Voltage - Drain-Source
    203 to 208 V
  • Voltage - Drain-Source (Vdss)
    200 V
  • Voltage - Gate-Source (Vgs)
    -6 to 11 V
  • Current
    100 mA
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Feedback Capacitance
    1.73 pF
  • Input Capacitance
    610 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    181 pF
  • Package Type
    Ceramic, 2-Hole Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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