ART2K0TFES

RF Transistor by Ampleon (325 more products)

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The ART2K0TFES from Ampleon is a LDMOS Power Transistor that operates from 1 to 400 MHz. It delivers a CW/pulsed output power of 2 kW with a power gain from 27 to 29 dB and has a drain efficiency of up to 73%. This transistor is based on Advanced Rugged Technology (ART) and can support a wide range of ISM, broadcast, and communication applications. It has integrated dual-sided ESD protection that enables class C operation and complete switch-off of the transistor. The transistor is available in an earless flanged ceramic package that measures 32.26 x 14.60 x 4.85 mm and is ideal for industrial, scientific & medical applications like plasma generators, MRI systems, CO2 lasers, particle accelerators & broadcast applications like FM radio & VHF TV and Radar applications like non-cellular communications & UHF radar.

Product Specifications

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Product Details

  • Part Number
    ART2K0TFES
  • Manufacturer
    Ampleon
  • Description
    2 kW CW/Pulsed LDMOS Power Transistor from 1 to 400 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, Communication, ISM, Radar, Wireless Infrastructure
  • Application
    MRI Systems, Plasma Generators, Radar, Radio, TV, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    1 to 400 MHz
  • Power
    63 dBm
  • P1dB
    2000 W
  • Power Gain (Gp)
    27 to 29 dB
  • Input Return Loss
    15 dB
  • Supply Voltage
    65 V
  • Breakdown Voltage - Drain-Source
    203 to 208 V
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Feedback Capacitance
    1.88 pF
  • Input Capacitance
    598 pF
  • Output Capacitance
    179 pF
  • Package Type
    Earless Flanged
  • Dimension
    32.26 x 14.6x 4.85 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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