B11G1822N60D

RF Transistor by Ampleon (326 more products)

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The B11G1822N60D from Ampleon is a 2-Stage Integrated Doherty MMIC that operates from 1800 to 2200 MHz. It delivers a nominal output power of 70 W (at 3 dB gain compression) with a power gain of 29 dB and a drain efficiency of 29.5%. This MMIC is manufactured using Ampleon's state-of-the-art LDMOS technology and has independent control of the carrier and peaking bias. It integrates an input splitter, output combiner, output matching, and ESD protection in a single package. The MMIC is available in a PQFN package that measures 12 x 7 mm and is ideal for macro and micro base stations, 5G mMIMO, W-CDMA/LTE, Active antennas, and General-purpose applications.

Product Specifications

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Product Details

  • Part Number
    B11G1822N60D
  • Manufacturer
    Ampleon
  • Description
    70 W, 2-Stage LDMOS Integrated Doherty MMIC from 1.8 to 2.2 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    Macrocell Base Station Driver, 5G mMIMO, W-CDMA/LTE, Active Antenna
  • Application
    Base Station, 5G, 3G / WCDMA, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    1800 to 2200 MHz
  • Power
    47.0 to 48.5 dBm
  • Power(W)
    50.11 to 70.7 W
  • OIP3
    47 to 48.5 dBm
  • Power Gain (Gp)
    29.8 dB
  • Input Return Loss
    -15 to -10 dB
  • Supply Voltage
    5 V
  • Voltage - Drain-Source (Vdss)
    65 V (Max)
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Efficiency
    0.295
  • Drain Leakage Current (Id)
    1.4 uA
  • Quiescent Drain Current
    75 mA
  • Gate Leakage Current (Ig)
    140 nA
  • IMD
    -45 dBc
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    2.1 to 2.45 K/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Power Ratio:- -42.1 dBc

Technical Documents