The B11G2327N70D from Ampleon is a Dual-Path 2-Stage Doherty LDMOS FET that operates from 2300 MHz to 2700 MHz. It delivers an output power of 5 W with a power gain of 30 dB and has a drain efficiency of 20.7%. This transistor uses Ampleon's state-of-the-art LDMOS technology, has an integrated input splitter and output combiner. The carrier and peaking device, input splitter, output combiner, and pre-match are integrated into a single package. It is available in a PQFN package and is ideal for use in macro-cell base station driver, microcell base station, 5G MIMO, W-CDMA/LTE, active antenna, and general-purpose applications.
