BLA9H0912LS-1200P

RF Transistor by Ampleon (323 more products)

Note : Your request will be directed to Ampleon.

BLA9H0912LS-1200P Image

The BLA9H0912LS-1200PG from Ampleon is an LDMOS Power Transistor that operates from 960 to 1215 MHz. It delivers an output power of 1200 W with a power gain of 19 dB and has a drain efficiency of 60%. This transistor has integrated dual-sided ESD protection for excellent off-state isolation. It offers high flexibility with respect to all pulse formats, has a pulse droop power of 0.2 dB, and a rise/fall time of 6 ns. It requires a DC supply of 50 V. This transistor is available in an internally matched ceramic flange package that measures 1.625 x 0.674 x 0.089 inches and is designed for avionics applications.

Product Specifications

View similar products

Product Details

  • Part Number
    BLA9H0912LS-1200P
  • Manufacturer
    Ampleon
  • Description
    1.2 kW LDMOS Power Transistor from 960 to 1215 MHz for Avionics Application

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Avionics, Wireless Infrastructure
  • CW/Pulse
    Pulse
  • Frequency
    960 to 1215 MHz
  • Power
    60.79 dBm
  • Power(W)
    1.2 kW
  • Power Gain (Gp)
    17.8 to 19 dB
  • Input Return Loss
    15 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Breakdown Voltage - Drain-Source
    106 V
  • Current
    75 mA
  • Drain Leakage Current (Id)
    2.8 uA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents