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BLL6H1214P2S-250

RF Transistor by Ampleon (325 more products)
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The BLL6H1214P2S-250 from Ampleon is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 52.79 to 54.62 dBm, Power(W) 289.73 W, Duty_Cycle 0.3, Power Gain (Gp) 27 dB. Tags: Surface Mount. More details for BLL6H1214P2S-250 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BLL6H1214P2S-250
  • Manufacturer
    Ampleon
  • Description
    53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar, Wireless Infrastructure
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    52.79 to 54.62 dBm
  • Power(W)
    289.73 W
  • Pulsed Width
    1.8 ms
  • Duty_Cycle
    0.3
  • Power Gain (Gp)
    27 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    45 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Efficiency
    0.48
  • Drain Current
    200 mA
  • Package Type
    Surface Mount
  • Package
    SOM039
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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