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BLL9G1214L-600

RF Transistor by Ampleon (326 more products)
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The BLL9G1214L-600 from Ampleon is a LDMOS L-band RF power transistor that operates from 1200 MHz to 1400 MHz. The transistor provides up to 600 Watts of power with a gain of 19 dB while operating on a 32 V supply. It is available in a flanged ceramic package with 2 mounting holes and 2 leads. The device is ideal for L-band radar applications.

Product Specifications

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Product Details

  • Part Number
    BLL9G1214L-600
  • Manufacturer
    Ampleon
  • Description
    600 W LDMOS Power Transistor from 1.2 to 1.4 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    L Band, Radar
  • Application
    Radar
  • Frequency
    1.2 GHz to 1.4 GHz
  • Power
    57.78 dBm
  • Power(W)
    600 W
  • Gain
    19 dB
  • Input Return Loss
    -7 dB
  • Supply Voltage
    32 V
  • Threshold Voltage
    1.5 to 2.5 V
  • Breakdown Voltage
    65 V
  • Drain Leakage Current (Id)
    5 uA
  • Gate Leakage Current (Ig)
    400 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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