BLM10D1822-60ABG

RF Transistor by Ampleon (325 more products)

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The BLM10D1822-60ABG from Ampleon is an LDMOS 2-Stage Integrated Doherty MMIC that operates from 1800 to 2200 MHz. It delivers up to 48.4 dBm of output power with a gain of 27.8 dB and has a drain efficiency of more than 39%. This multi-band device uses Ampleon’s state-of-the-art GEN10 LDMOS technology and can be used as a general-purpose driver for mMIMO. The carrier and peaking device, input splitter, and output combiner are integrated into a single package along with ESD protection. It is available in an 8-lead package that measures 10.30 x 10.30 x 3.92 mm and is suitable for multi-carrier and multi-standard GSM, W-CDMA, and LTE base station applications.

Product Specifications

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Product Details

  • Part Number
    BLM10D1822-60ABG
  • Manufacturer
    Ampleon
  • Description
    2-Stage LDMOS Doherty MMIC from 1800 to 2200 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    GSM, 3G / WCDMA, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    1.8 to 2.2 GHz
  • Power
    48.4 dBm
  • Power(W)
    69.18 W
  • Peak Output Power
    48.4 dBm
  • Power Gain (Gp)
    26 to 30 dB
  • Power Added Effeciency
    46.5 to 57.5 Percent
  • Input Return Loss
    -15 to -10 dB
  • VSWR
    10:1
  • Supply Voltage
    28 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -6 to 9 V
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Lead Free
    Yes
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    1.9 to 2.7 K/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    ACPR : -30.8 dB, Gain Flatness : 0.8 dB, Gain Variation : 0.047 dB/C

Technical Documents