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BLM10D2327-60ABG

RF Transistor by Ampleon (323 more products)
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The BLM10D2327-60ABG from Ampleon is a RF Transistor with Frequency 2.3 to 2.7 GHz, Power 48.4 dBm (P3dB), Power(W) 69.18 W, Duty_Cycle 10%, Power Gain (Gp) 26.3 to 30.3 dB. Tags: Surface Mount. More details for BLM10D2327-60ABG can be seen below.

Product Specifications

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Product Details

  • Part Number
    BLM10D2327-60ABG
  • Manufacturer
    Ampleon
  • Description
    LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.3 to 2.7 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    4G / LTE, GSM, 3G / WCDMA, CDMA, Base Station, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.3 to 2.7 GHz
  • Power
    48.4 dBm (P3dB)
  • Power(W)
    69.18 W
  • Pulsed Width
    100 uSec
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    26.3 to 30.3 dB
  • Input Return Loss
    10 dB
  • Supply Voltage
    28 V
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    P5 dB : 48.7 dBm

Technical Documents
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