BLM10D3740-35AB

RF Transistor by Ampleon (325 more products)

Note : Your request will be directed to Ampleon.

BLM10D3740-35AB Image

The BLM10D3740-35AB from Ampleon is a RF Transistor with Frequency 3.7 to 4 GHz, Power 44.7 to 45.2 dBm (P3dB), Power(W) 29.51 to 33.11 W, Duty_Cycle 10%, Power Gain (Gp) 32.2 to 36.4 dB. Tags: Surface Mount. More details for BLM10D3740-35AB can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    BLM10D3740-35AB
  • Manufacturer
    Ampleon
  • Description
    LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.7 to 4 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Small Cell, Base Station, 5G, 4G / LTE, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    3.7 to 4 GHz
  • Power
    44.7 to 45.2 dBm (P3dB)
  • Power(W)
    29.51 to 33.11 W
  • Pulsed Width
    100 uSec
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    32.2 to 36.4 dB
  • Input Return Loss
    10 dB
  • Supply Voltage
    28 V
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Impedance Zl
    30 Ohms
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Surface Mount
  • Dimension
    8 x 8 x 2.1 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents