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BLM9D1819-08AM

RF Transistor by Ampleon (326 more products)
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The BLM9D1819-08AM from Ampleon is a RF Transistor with Frequency 1.805 to 1.88 GHz, Power 38.5 to 39.6 dBm (P3dB), Power(W) 7.08 to 9.12 W, Duty_Cycle 10%, Power Gain (Gp) 25.5 to 30 dB. Tags: Surface Mount. More details for BLM9D1819-08AM can be seen below.

Product Specifications

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Product Details

  • Part Number
    BLM9D1819-08AM
  • Manufacturer
    Ampleon
  • Description
    LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.805 to 1.88 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Small Cell, Base Station, 4G / LTE, GSM, 3G / WCDMA, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    1.805 to 1.88 GHz
  • Power
    38.5 to 39.6 dBm (P3dB)
  • Power(W)
    7.08 to 9.12 W
  • Pulsed Width
    100 uSec
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    25.5 to 30 dB
  • Input Return Loss
    11 to 16 dB
  • Supply Voltage
    28 V
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    175 Degree C
  • Package Type
    Surface Mount
  • Dimension
    7 x 7 x 0.98 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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