BLP0408H9S30

RF Transistor by Ampleon (323 more products)

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The BLP0408H9S30 from Ampleon is an LDMOS Power Transistor that operates from 400 to 860 MHz. This pulsed CW transistor provides a P1dB of 30 watts with a power gain of 20.2 dB and a drain efficiency of 62%. The device features an integrated dual-sided ESD protection circuitry and is available in a plastic package. It is ideal for class AB transmitters, digital & analog broadcasting, industrial, scientific, medical, and broadcast transmitter applications.

Product Specifications

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Product Details

  • Part Number
    BLP0408H9S30
  • Manufacturer
    Ampleon
  • Description
    30 W LDMOS Power Transistor from 400 to 860 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, ISM, Wireless Infrastructure
  • Application
    Communication System, Industrial, Scientific and Medical, ISM Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    400 to 860 MHz
  • Power
    44.77 dBm
  • Power(W)
    30 Watt
  • P1dB
    30 Watt
  • Gain
    18.5 to 20.2 dB
  • Power Gain (Gp)
    18.5 to 20.2 dB
  • Input Return Loss
    9 to 12 V
  • Class
    Class AB
  • Features
    High Efficiency, Excellent Stability, High Power Gain
  • Threshold Voltage
    1.5 to 2.5 V
  • Breakdown Voltage - Drain-Source
    108 Volt
  • Voltage - Drain-Source (Vdss)
    108 Volt
  • Voltage - Gate-Source (Vgs)
    -6 to 11 Volt
  • Drain Leakage Current (Id)
    1.4 Micro Ampere
  • Gate Leakage Current (Ig)
    140 nA
  • Lead Free
    Yes
  • Test Signal
    CW, Pulsed, DVB-T (8k OFDM)
  • Feedback Capacitance
    0.24 pF
  • Input Capacitance
    112 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    9.1 pF
  • Thermal Resistance
    2.30 K/W
  • Package Type
    Surface Mount
  • Package
    plastic
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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