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BLP10H660PG

RF Transistor by Ampleon (325 more products)
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The BLP10H660PG from Ampleon is a RF Transistor with Frequency 10 MHz to 1 GHz, Power 47.78 dBm, Power(W) 59.98 W, P1dB 47.78 dBm, Power Gain (Gp) 16.8 to 18 dB. Tags: Surface Mount. More details for BLP10H660PG can be seen below.

Product Specifications

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Product Details

  • Part Number
    BLP10H660PG
  • Manufacturer
    Ampleon
  • Description
    10 MHz to 1 GHz, Power LDMOS transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy, Wireless Infrastructure
  • Application
    Industrial, ISM Band
  • CW/Pulse
    Pulse
  • Frequency
    10 MHz to 1 GHz
  • Power
    47.78 dBm
  • Power(W)
    59.98 W
  • P1dB
    47.78 dBm
  • Power Gain (Gp)
    16.8 to 18 dB
  • VSWR
    40.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.25 to 2.25 V
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -6 to 11 V
  • Drain Current
    40 mA
  • Package Type
    Surface Mount
  • Package
    SOT1224-2
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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