CLP24H4S30P

RF Transistor by Ampleon (327 more products)

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The CLP24H4S30P from Ampleon is a GaN-on-SiC  HEMT Power Transistor that operates from 2400 to 2500 MHz. It delivers an average output power of 25 W with a power gain of 17 dB and a drain efficiency of 75%. This CW transistor is optimized to achieve optimal continuous wave (CW) power and efficiency to drive high-power CW transistors. It is internally input-matched and only requires a very small external matching circuit to further improve the performance. This HEMT transistor has a drain-source voltage of 50 V and consumes 20 mA of quiescent drain current. It is available in a DFN package measuring 7.0 x 6.5 mm. This transistor is ideal for commercial and consumer cooking, industrial, scientific, and medical applications.

Product Specifications

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Product Details

  • Part Number
    CLP24H4S30P
  • Manufacturer
    Ampleon
  • Description
    25 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    RF Energy, ISM
  • Application Type
    Cooking, Industrial, Scientific and Medical Applications
  • CW/Pulse
    CW
  • Frequency
    2.4 to 2.5 GHz
  • Power
    43.91 to 44.77 dBm
  • Power(W)
    25 to 30 W
  • Power Gain (Gp)
    17 dB
  • Input Return Loss
    8 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -15 to 2 V
  • Drain Efficiency
    61 %
  • Drain Bias Current
    2.68 A
  • Drain Leakage Current (Id)
    0.774 mA
  • Gate Leakage Current (Ig)
    0.155 mA
  • Thermal Resistance
    5.7 to 6.12 K/W
  • Package Type
    Surface Mount
  • Package
    DFN
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree CC

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