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CG2H30070

RF Transistor by MACOM (309 more products)
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The CG2H30070 from MACOM is a 70 W RF Power GaN HEMT that operates from 0.5 to 3 GHz. This internally matched gallium nitride transistor provides a gain of up to 11.4 dB and requires a 28 volt rail. It is available in a flange package and is an ideal general purpose, broadband solution for a variety of RF and microwave applications.

Product Specifications

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Product Details

  • Part Number
    CG2H30070
  • Manufacturer
    MACOM
  • Description
    70 Watt, RF Power GaN HEMT from 0.5 to 3.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar
  • Application
    Radar, Amplifiers, Military
  • CW/Pulse
    CW
  • Frequency
    0.5 to 3 GHz
  • Power
    49.29 to 50.37 dBm
  • Power(W)
    85 to 109 W
  • Small Signal Gain
    17.8 dB
  • Power Gain (Gp)
    12.4 dB
  • VSWR
    5:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    0.7
  • Drain Current
    23 to 28.8 A
  • Feedback Capacitance
    1.49 pF
  • Input Capacitance
    68.1 pF
  • Output Capacitance
    11.3 pF
  • Package Type
    2-Hole Flanged
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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