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CGHV35120F

RF Transistor by MACOM (309 more products)
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The CGHV35120F from MACOM is a GaN HEMT that operates from 3.1 to 3.5 GHz. It provides an output power of 120 W and a gain of 13 dB while operating from a 50 V supply voltage. The device is available in a ceramic/metal flange package and is ideal for S-band radar amplifier applications.

Product Specifications

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Product Details

  • Part Number
    CGHV35120F
  • Manufacturer
    MACOM
  • Description
    3.1 to 3.5 GHz GaN HEMT for S-Band Radar Power Amplifiers

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Aerospace & Defence
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    50.79 dBm
  • Power(W)
    120 W
  • Pulsed Width
    300 usec
  • Duty_Cycle
    20 %
  • Gain
    13 dB
  • Efficiency
    62 to 68 %
  • Supply Voltage
    50 V
  • Feedback Capacitance
    0.7 pF
  • Input Capacitance
    65 pF
  • Output Capacitance
    9.5 pF
  • Package Type
    Flanged
  • Operating Temperature
    -40 to 130 Degrees C
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents
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