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The CGHV35400F from MACOM is a RF Transistor with Frequency 2.9 to 3.5 GHz, Power 56.13 to 57.28 dBm, Power(W) 534.56 W, Duty_Cycle 0.1, Small Signal Gain 10.1 to 11.3 dB. Tags: Flanged. More details for CGHV35400F can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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