CGHV59070

RF Transistor by MACOM (309 more products)

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CGHV59070 Image

The CGHV59070 from MACOM is a GaN HEMT that operates from 4.5 to 5.9 GHz. It delivers an output power of more than 70 Watts with a gain of 12 dB and drain efficiency of 50%. The transistor is available in a flange & pill package and is ideal for marine radars, weather monitoring and port security applications.

Product Specifications

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Product Details

  • Part Number
    CGHV59070
  • Manufacturer
    MACOM
  • Description
    70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    C Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    4.5 to 5.9 GHz
  • Power
    48.81 to 50 dBm
  • Power(W)
    100 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    13.3 to 14.5 dB
  • VSWR
    5.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    0.15 A
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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