GTRA374902FC-V1

RF Transistor by MACOM (310 more products)

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The GTRA374902FC-V1 from MACOM is a GaN on SiC HEMT that operates from 3600 to 3700 MHz. It provides a peak output power of 450 watts with a gain of 11.5 dB and efficiency of 60% while operating 3700 MHz from a 48V supply. This Pulsed device has a pulse width of 10 µs and a duty cycle of 10%. It is available in a thermally enhanced package with an earless flange and is ideal for multi-standard cellular power amplifier applications. The GTRA374902FC-V1 is capable of withstanding a 10:1 load mismatch at 48 V, 63 W (WCDMA) output power. It has been designed for Telecom applications.

Product Specifications

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Product Details

  • Part Number
    GTRA374902FC-V1
  • Manufacturer
    MACOM
  • Description
    450 W RF GaN on SiC HEMT from 3.6 to 3.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    3600 to 3700 MHz
  • Power
    56.53 dBm
  • Power(W)
    450 W
  • Gain
    11.5 dB
  • Supply Voltage
    50 V
  • Drain Efficiency
    0.6
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents