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PTVA127002EV-V1

RF Transistor by MACOM (309 more products)
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The PTVA127002EV-V1 from MACOM is a RF LDMOS FET that operates from 1.2 to 1.4 GHz. It provides a peak output power of 700 W and a gain of 16 dB with a drain efficiency of 56%. The device is available in a thermally-enhanced package with bolt-down flange and is ideal for use in power amplifier applications.

Product Specifications

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Product Details

  • Part Number
    PTVA127002EV-V1
  • Manufacturer
    MACOM
  • Description
    700 W High Power RF LDMOS FET from 1.2 to 1.4 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar, Aerospace & Defence
  • Application
    Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    1200 to 1400 MHz
  • Power
    58.45 dBm
  • Power(W)
    700 W
  • Gain
    15.5 to 16 dB
  • Input Return Loss
    11 to 20 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents
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