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The GD135 from Gallium Semiconductor is a RF Transistor with Frequency DC to 3.2 GHz, Power 52.15 dBm, Power(W) 164.06 W, Saturated Power 111 to 164 W, Gain 15.4 to 20.2 dB. Tags: Die. More details for GD135 can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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