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GD250

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The GD250 from Gallium Semiconductor is a RF Transistor with Frequency DC to 2.9 GHz, Saturated Power 250 W, Gain 18.6 dB, Supply Voltage 50 V, Breakdown Voltage - Drain-Source 150 V. Tags: Die. More details for GD250 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD250
  • Manufacturer
    Gallium Semiconductor
  • Description
    250 W, GaN on SiC HEMT from DC to 2.9 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar, Test & Measurement, Wireless Infrastructure
  • Application
    Radar, Test & Instrumentation, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 2.9 GHz
  • Saturated Power
    250 W
  • Gain
    18.6 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to +2 V
  • Drain Efficiency
    0.66
  • Drain Leakage Current (Id)
    4.4 mA
  • Quiescent Drain Current
    250 mA
  • Power Dissipation (Pdiss)
    102 W
  • Package Type
    Die
  • Dimension
    5.5 x 0.9 mm
  • Grade
    Commercial, Military
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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