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The GD250 from Gallium Semiconductor is a RF Transistor with Frequency DC to 2.9 GHz, Saturated Power 250 W, Gain 18.6 dB, Supply Voltage 50 V, Breakdown Voltage - Drain-Source 150 V. Tags: Die. More details for GD250 can be seen below.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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