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The GD250 from Gallium Semiconductor is a RF Transistor with Frequency DC to 2.9 GHz, Saturated Power 250 W, Gain 18.6 dB, Supply Voltage 50 V, Breakdown Voltage - Drain-Source 150 V. Tags: Die. More details for GD250 can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
2.5 kW LDMOS Power Transistor from 1 to 400 MHz
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