The GT135D from Gallium Semiconductor is a GaN-on-SiC HEMT that operates from DC to 3.2 GHz. It delivers a saturated output power of 150 W with a gain of more than 13 dB and an efficiency of up to 70 %. This unmatched transistor supports both linear and pulsed modes of operation, requires a DC supply of 50 V, and consumes less than 250 mA of drain current. It is available in a 14-pin DFN package that measures 6 x 3 mm and is ideal for cellular infrastructure, radar, communication, and test instrumentation applications.
