The GTH0-0037110S from Gallium Semiconductor is a GaN-on-SiC HEMT that operates from DC to 3.7 GHz. It delivers a saturated output power of 110 W with up to 22.9 dB of gain and an efficiency of more than 65.3%. This transistor supports CW, linear & pulse operation, requires a DC supply of 28/50 V, and consumes 109 mA of drain current. It is available in a NI-360 air cavity ceramic package that measures 20.45 x 18.54 x 4.57 mm and is ideal for cellular infrastructure, radar, communications, and test instrumentation applications.
