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IB0912L70

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The IB0912L70 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 48.45 to 50 dBm, Power(W) 100 W, Duty_Cycle 0.227, Gain 11.6 dB. Tags: Flanged. More details for IB0912L70 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB0912L70
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 to 1215 MHz, 11.6 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    48.45 to 50 dBm
  • Power(W)
    100 W
  • Peak Output Power
    70 W
  • Pulsed Width
    444x (7us on, 6us off)
  • Duty_Cycle
    0.227
  • Gain
    11.6 dB
  • Power Gain (Gp)
    11.46 to 13 dB
  • Supply Voltage
    44 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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