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IB0912M70

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The IB0912M70 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.215 GHz, Power 48.45 to 50.93 dBm, Power(W) 123.88 W, Duty_Cycle 0.1, Gain 10.6 dB. Tags: Flanged. More details for IB0912M70 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB0912M70
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 to 1215 MHz, 12 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.215 GHz
  • Power
    48.45 to 50.93 dBm
  • Power(W)
    123.88 W
  • Peak Output Power
    70 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Gain
    10.6 dB
  • Power Gain (Gp)
    10.67 to 13.17 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    75 V (Collector Emmiter)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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