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IB1011M660

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The IB1011M660 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 58.2 to 59.7 dBm, Power(W) 933.25 W, Gain 11.1 dB, Power Gain (Gp) 10.8 to 12.3 dB. Tags: Flanged. More details for IB1011M660 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1011M660
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 11.1 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    58.2 to 59.7 dBm
  • Power(W)
    933.25 W
  • Peak Output Power
    660 W
  • Pulsed Width
    0.5µs on / 0.5µs off x 128
  • Gain
    11.1 dB
  • Power Gain (Gp)
    10.8 to 12.3 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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