1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IB1012S10

IB1012S10

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IB1012S10 Image

The IB1012S10 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.025 to 1.150 GHz, Power 40 to 41.49 dBm, Power(W) 14.09 W, Duty_Cycle 0.01, Gain 11.3 dB. Tags: Flanged. More details for IB1012S10 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IB1012S10
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1025 to 1150 MHz, 11.3 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.150 GHz
  • Power
    40 to 41.49 dBm
  • Power(W)
    14.09 W
  • Peak Output Power
    10 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.01
  • Gain
    11.3 dB
  • Power Gain (Gp)
    10.46 to 11.96 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View similar products