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IB1214M130

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The IB1214M130 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 51.14 to 54.15 dBm, Power(W) 260.02 W, Duty_Cycle 0.1, Gain 8.8 dB. Tags: Flanged. More details for IB1214M130 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1214M130
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1200 to 1400 MHz, 8.81 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    51.14 to 54.15 dBm
  • Power(W)
    260.02 W
  • Peak Output Power
    130 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    8.8 dB
  • Power Gain (Gp)
    8.15 to 11.15 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    75 V (Collector Emmiter), 2 V (Emmiter base)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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