1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IB1214M32

IB1214M32

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IB1214M32 Image

The IB1214M32 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 45.05 to 49.02 dBm, Power(W) 79.8 W, Duty_Cycle 0.1, Gain 10.6 dB. Tags: Flanged. More details for IB1214M32 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IB1214M32
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1200 to 1400 MHz, 10.6 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    45.05 to 49.02 dBm
  • Power(W)
    79.8 W
  • Peak Output Power
    32 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    10.6 dB
  • Power Gain (Gp)
    9 to 13 dB
  • Supply Voltage
    40 V
  • Breakdown Voltage
    75 V (Collector Emmiter), 2 V (Emmiter base)
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View similar products