1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IB2226M80

IB2226M80

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IB2226M80 Image

The IB2226M80 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.25 to 2.55 GHz, Power 49.03 dBm, Power(W) 79.98 W, Duty_Cycle 0.1, Gain 8.4 dB. Tags: Flanged. More details for IB2226M80 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IB2226M80
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2200 to 2260 MHz, 8.4 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.25 to 2.55 GHz
  • Power
    49.03 dBm
  • Power(W)
    79.98 W
  • Peak Output Power
    80 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Gain
    8.4 dB
  • Power Gain (Gp)
    7.89 dB
  • Supply Voltage
    36 V
  • Breakdown Voltage
    65 V (Collector Emmiter)
  • Drain Efficiency
    0.38
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -30 to 50 Degree C
  • Storage Temperature
    -65 to 200 Degree C

Technical Documents
View similar products