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IB3000S200

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The IB3000S200 from Integra Technologies, Inc. is a RF Transistor with Frequency 3 GHz, Power 33.01 dBm, Power(W) 2 W, Duty_Cycle 0.01, Gain 9.4 dB. Tags: Flanged. More details for IB3000S200 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB3000S200
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3000 MHz, 9.5 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    ISM
  • Application
    ISM Band, Medical
  • CW/Pulse
    Pulse
  • Frequency
    3 GHz
  • Power
    33.01 dBm
  • Power(W)
    2 W
  • Peak Output Power
    200 W
  • Pulsed Width
    12 us
  • Duty_Cycle
    0.01
  • Gain
    9.4 dB
  • Supply Voltage
    40 V
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Drain Efficiency
    0.4
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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