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IGN0160UM10

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The IGN0160UM10 from Integra Technologies, Inc. is a RF Transistor with Frequency 100 MHz to 6 GHz, Power 41.76 dBm, Power(W) 15 W, Gain 18 dB, Power Gain (Gp) 15 to 19 dB. Tags: Flanged. More details for IGN0160UM10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN0160UM10
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    100 MHz to 6 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    General Purpose
  • CW/Pulse
    CW
  • Frequency
    100 MHz to 6 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Gain
    18 dB
  • Power Gain (Gp)
    15 to 19 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Quiescent Drain Current
    20 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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