IGN0450L1250

The IGN0450L1250 from Integra is a GaN-on-SiC push-pull RF Power Transistor that operates from 430 to 450 MHz. The transistor has been designed for P band radar systems. It delivers a peak output power of more than 1250 W with a gain of 18.5 dB and has an efficiency of up to 85%. The transistor has a pulse droop of -0.4 dB and a duty cycle of 25 %. It requires a DC supply of 50 V and is available in a metal-based package with a thermal enhancement and uses an epoxy-sealed ceramic lid.