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IGN0912L500

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The IGN0912L500 from Integra Technologies, Inc. is a RF Transistor with Frequency 960 MHz to 1.22 GHz, Power 56.99 dBm, Power(W) 500.03 W, Gain 15 dB, Power Gain (Gp) 15 to 18 dB. Tags: Flanged. More details for IGN0912L500 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN0912L500
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    960 MHz to 1.22 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.22 GHz
  • Power
    56.99 dBm
  • Power(W)
    500.03 W
  • Pulsed Width
    444 X (7µs ON, 6µs OFF)
  • Gain
    15 dB
  • Power Gain (Gp)
    15 to 18 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    8 to 16 W
  • Quiescent Drain Current
    100 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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