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IGN1011L1200

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The IGN1011L1200 from Integra Technologies is an L-Band RF Transistor that operates from 1.03 to 1.09 GHz. The amplifier has been specified for use under class AB operation and provides an output peak powr of 1200 Watts with a power gain of 16.8 dB. The amplifier requires a 50 V power supply and is available in a metal based package sealed with Ceramic-Epoxy Lid that measures 34.04 mm × 9.78 mm.

Product Specifications

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Product Details

  • Part Number
    IGN1011L1200
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.03 to 1.09 GHz L-Band GaN Transistor for Avionics

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • CW/Pulse
    Pulse
  • Frequency
    1.030 to 1.090 GHz
  • Power
    60.79 dBm
  • Power(W)
    1199.5 W
  • Pulsed Width
    48 x (32µs ON, 18µs OFF)
  • Duty_Cycle
    0.064
  • Gain
    17 dB
  • Power Gain (Gp)
    15.8 to 18 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    19 to 32 W
  • Quiescent Drain Current
    150 to 170 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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