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IGN1011M800

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The IGN1011M800 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.030 to 1.090 GHz, Power 59.03 dBm, Power(W) 799.83 W, Duty_Cycle 0.02, Gain 16 dB. Tags: Flanged. More details for IGN1011M800 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN1011M800
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.030 to 1.090 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.030 to 1.090 GHz
  • Power
    59.03 dBm
  • Power(W)
    799.83 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.02
  • Gain
    16 dB
  • Power Gain (Gp)
    15 to 18.2 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    12 to 25 W
  • Quiescent Drain Current
    140 to 160 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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